NTMS4800N
Power MOSFET
30 V, 8 A, N ? Channel, SOIC ? 8
Features
?
?
?
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
SOIC ? 8 Surface Mount Package Saves Board Space
This is a Pb ? Free Device
V (BR)DSS
http://onsemi.com
R DS(ON) MAX
I D MAX
Applications
? DC ? DC Converters
? Printers
30 V
20 m W @ 10 V
27 m W @ 4.5 V
8A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Unit
N ? Channel
D
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
6.4
5.1
1.29
A
W
G
S
T A = 25 ° C
Continuous Drain
Current R q JA (Note 2)
Power Dissipation R q JA
(Note 2)
Continuous Drain
Current R q JA , t < 10 s
(Note 1)
Power Dissipation
R q JA , t < 10 s (Note 1)
Pulsed Drain Current
T A = 25 ° C
Steady T A = 70 ° C
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 25 ° C, t p = 10 m s
I D
P D
I D
P D
I DM
4.9
3.9
0.75
8.0
6.4
2.0
32
A
W
A
W
A
1
SO ? 8
CASE 751
STYLE 12
4800N
A
Y
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
= Device Code
= Assembly Location
= Year
Operating Junction and Storage Temperature
T J ,
T stg
? 55 to
+150
° C
WW
G
= Work Week
= Pb ? Free Package
Source Current (Body Diode)
I S
2.0
A
(Note: Microdot may be in either location)
Single Pulse Drain ? to ? Source Avalanche Energy E AS
(T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 11 A pk , L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L
(1/8 ″ from case for t = 10 s)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Ambient – Steady State (Note 1) R q JA
Junction ? to ? Ambient – t < 10 s (Note 1) R q JA
Junction ? to ? Foot (Drain)
R q JF
Junction ? to ? Ambient – Steady State (Note 2)
R q JA
60.5
260
Value
97
62.5
25
167
mJ
° C
Unit
° C/W
ORDERING INFORMATION
Device Package Shipping ?
NTMS4800NR2G SOIC ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad, 1 oz Cu
2. Surface ? mounted on FR4 board using the minimum recommended pad size
? Semiconductor Components Industries, LLC, 2009
August, 2009 ? Rev. 1
1
Publication Order Number:
NTMS4800N/D
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相关代理商/技术参数
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NTMS4802N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, N−Channel, SO−8
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NTMS4807N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 14.8 A, N-Channel, SO-8
NTMS4807NR2G 功能描述:MOSFET NFET SO8 30V 14.8A 0.061R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4816N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11 A, N-Channel, SO-8
NTMS4816NR2G 功能描述:MOSFET NFET SO8 30V 11A NCH 0.030R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube